The Analysis of Quality of Technology of Local Oxidation
Problems of technology LOCOS, related with local oxidation of a epitaxical layer was researched. A lot of problems arise because of an irregularity of an oxidized surface. Using program SUPREM, mathematical modeling of local growth of silicon is carried out. Designed profiles of oxide LOCOS, depending from hole in a epitaxical layer, and also from operating conditions of oxidation: temperature and time. It is determined, that most acceptable results are received when the form of hole is similar to a trapezoid, and oxidation descends in wet oxygen, at 1100 ºС. Ill. 9, bibl. 3 (in Lithuanian, summaries in Lithuanian, English and Russian).
How to Cite
The copyright for the paper in this journal is retained by the author(s) with the first publication right granted to the journal. The authors agree to the Creative Commons Attribution 4.0 (CC BY 4.0) agreement under which the paper in the Journal is licensed.
By virtue of their appearance in this open access journal, papers are free to use with proper attribution in educational and other non-commercial settings with an acknowledgement of the initial publication in the journal.