Simulation of Doped Si Oxidation in Nano-dimension Scale

Authors

  • T. Kersys Kaunas University of Technology
  • R. Anilionis Kaunas University of Technology
  • D. Eidukas Kaunas University of Technology

Abstract

The fabrication of microelectronic structures and devices vitally depends on the thermal oxidation. It is observed that thickness of SiO2 layer getting uneven when oxidizing doped Si areas by various dopants. It was defined that dopants determinate SiO2 formation in thermal oxidation technological process. Dimension is very important parameter in nano-technologies therefore doping dependent oxidation makes additional problems when forming nano-structures. By using mathematical simulation program ATHENA was performed mathematical simulation of Si thermal oxidation, and was evaluated the Si substrate doping dependent oxidation. Ill. 12, bibl. 7 (in English; summaries in English, Russian and Lithuanian).

Downloads

Published

2008-04-19

How to Cite

Kersys, T., Anilionis, R., & Eidukas, D. (2008). Simulation of Doped Si Oxidation in Nano-dimension Scale. Elektronika Ir Elektrotechnika, 84(4), 43-46. Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/11126

Issue

Vol. 84 No. 4 (2008)

Section

T 171 MICROELECTRONICS

License

The copyright for the paper in this journal is retained by the author(s) with the first publication right granted to the journal. The authors agree to the Creative Commons Attribution 4.0 (CC BY 4.0) agreement under which the paper in the Journal is licensed.

By virtue of their appearance in this open access journal, papers are free to use with proper attribution in educational and other non-commercial settings with an acknowledgement of the initial publication in the journal.