Optimisation and Problems of the Channel Area Formed by Two Ion Implantations in NMOS Structures

Authors

  • V. Kašauskas Kaunas University of Technology
  • R. Anilionis Kaunas University of Technology

Abstract

NMOS nano-structure channel structure depends on a number of technological processes. It is important to find and evaluate depend of technological operationts (TO) parameters to NMOP structures and output caharacteristics. The number of TOs in fabrication process is big, therefore it is difficult to evaluate and carry out optimization of all factors xi (TO parameters). Wherefore proposed optimization algorithm of 4 factors xi (energy and dose of to ion implantations parameters) by set output parameter value y (L) with the given allowable tolerance ε. This model is applicable for NMOS structures with designed 90 nm chanel.

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Published

2010-10-12

How to Cite

Kašauskas, V., & Anilionis, R. (2010). Optimisation and Problems of the Channel Area Formed by Two Ion Implantations in NMOS Structures. Elektronika Ir Elektrotechnika, 104(8), 35-38. Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/9205

Issue

Vol. 104 No. 8 (2010)

Section

MICROELECTRONICS

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