Groups of Technologies GaAs MESFET’s

Authors

  • R. Navickas

Abstract

Technologies of manufacture GaAs MESFET’s are classified to groups according to the possibilities of the minimal length of the channel and the distance between source and drain electrodes. The aspects of topology of those groups are analyzed.

Published

2000-04-18

How to Cite

Navickas, R. (2000). Groups of Technologies GaAs MESFET’s. Elektronika Ir Elektrotechnika, 26(3). Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/16854

Issue

Vol. 26 No. 3 (2000)

Section

Articles

License

The copyright for the paper in this journal is retained by the author(s) with the first publication right granted to the journal. The authors agree to the Creative Commons Attribution 4.0 (CC BY 4.0) agreement under which the paper in the Journal is licensed.

By virtue of their appearance in this open access journal, papers are free to use with proper attribution in educational and other non-commercial settings with an acknowledgement of the initial publication in the journal.