The 90 nm CMOS Charge Sensitive Preamplifier


  • V. Barzdėnas Vilnius Gediminas Technical University
  • R. Navickas Vilnius Gediminas Technical University


The design aspects for low-power, low-noise CMOS charge sensitive preamplifier (CSP), that use a MOSFET transistor as a feedback resistor and leakage current compensation for use with radiation sensors are presented. Computer simulation was carried out with the SPICE simulators using the BSIM4 parameters of the IBM CMOS 90 nm and has shown to simulate CSP with the differential cascade amplifier. The advantage of this CSP design is its low-noise level, high speed and high gain with very low-power consumption of 0.5 μW for the whole preamplifier. The preamplifier has unipolar response with the peaking time of about 35...45 ns and the gain is about 60…90 mV/kē. Equivalent noise charge is less than 160 ē, when the input charge is 1…10 kē and the sensors capacitance is equal to 30 fF. These CSP’s are the most widely used for hybrid pixel sensors for high energy particle physics experiments of the charge detection and for MEMS-micromachined inertial accelerometers. Ill. 5, bibl. 11 (in English; summaries in English, Russian and Lithuanian).




How to Cite

Barzdėnas, V., & Navickas, R. (2008). The 90 nm CMOS Charge Sensitive Preamplifier. Elektronika Ir Elektrotechnika, 81(1), 69-72. Retrieved from