Anomalous Oxidation of GaAs in the CF2Cl2/O2 Plasma
AbstractThe elemental structure of the surface of GaAs after etching in O2, CF2Cl2/O2 has been analysed. The layers of formed oxides (AsxOy, GaxOy) on the surface of GaAs in oxygen or halogen-oxygen plasmas are annealed. The etching of GaAs in CF2Cl2/O2 plasmas took place at the presence of intensive oxygen and arsenic interdiffusion in the near-surface layer. The surface was depleted by arsenic and enriched by oxygen and gallium oxides.
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