Anomalous Oxidation of GaAs in the CF2Cl2/O2 Plasma

Authors

  • A. Grigonis
  • S. Joneliunas

Abstract

The elemental structure of the surface of GaAs after etching in O2, CF2Cl2/O2 has been analysed. The layers of formed oxides (AsxOy, GaxOy) on the surface of GaAs in oxygen or halogen-oxygen plasmas are annealed. The etching of GaAs in CF2Cl2/O2 plasmas took place at the presence of intensive oxygen and arsenic interdiffusion in the near-surface layer. The surface was depleted by arsenic and enriched by oxygen and gallium oxides.

Published

1997-11-28

How to Cite

Grigonis, A., & Joneliunas, S. (1997). Anomalous Oxidation of GaAs in the CF2Cl2/O2 Plasma. Elektronika Ir Elektrotechnika, 13(4). Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/15902

Issue

Vol. 13 No. 4 (1997)

Section

Articles

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