Deposition of ZnO Layers Using Planar Reactive Magnetron System

J. Daugėla; S. Joneliūnas; A. Jotautis; R. Naujokaitis; E. Klovaitė

doi:10.5755/j02.eie.10495

Deposition of ZnO Layers Using Planar Reactive Magnetron System

Authors

J. Daugėla Kaunas University of Technology
S. Joneliūnas Kaunas University of Technology
A. Jotautis Kaunas University of Technology
R. Naujokaitis Kaunas University of Technology
E. Klovaitė Kaunas University of Technology

DOI:

https://doi.org/10.5755/j02.eie.10495

Abstract

Properties of ZnO films deposited using radiofrequency and direct current magnetron sputtering systems with ZnO and metallic Zn targets in oxygen and oxygen-argon gas mixture atmosphere on glass K-8 substrates were experimentally investigated. The influence of Cu impurities and ZnO layers post deposition thermal annealing is estimated. The optimal growth technological conditions of highly oriented polycrystalline piezoelectric ZnO films using planar reactive magnetron system are defined. The parameters of formed SAW delay lines were approximately equal of theoretically calculated for monocrystalline ZnO. Ill. 7, bibl. 5 (in English; summaries in Lithuanian, English and Russian).

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Published

2005-08-20

Issue

Vol. 63 No. 7 (2005)

Section

T 171 MICROELECTRONICS

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How to Cite

Daugėla, J., Joneliūnas, S., Jotautis, A., Naujokaitis, R., & Klovaitė, E. (2005). Deposition of ZnO Layers Using Planar Reactive Magnetron System. Elektronika Ir Elektrotechnika, 63(7), 70-73. https://doi.org/10.5755/j02.eie.10495