Plasma–Assisted Materials Processing for Manufacturing of the VLSI Circuits
AbstractThe reactive ion etching of silicon and GaAs in ionized gas of CF4-xClx, O2, SF6, and their mixtures with oxygen and hydrogen have been studies. The ion of low energy enhance the rate of heterogeneous reactions and the desorption of volatile compounds. Oxide and fluoride layer on the surface increases with the increase of bombarding ion energy. The formed surface layer at these conditions reduces the process of etching of GaAs. Etching in CF2Cl2 plasma is the most anisotropic, because the low amount of fluorine results the increase of concentration of CFx radicals. The formation of the altered layer and anizotropical etching through a mask may be described qualitatively by the phenomenological model.
How to Cite
Authors retain copyright and grant the journal the right of the first publication with the paper simultaneously licensed under the Creative Commons Attribution 4.0 (CC BY 4.0) licence.
Authors are allowed to enter into separate, additional contractual arrangements for the non-exclusive distribution of the paper published in the journal with an acknowledgement of the initial publication in the journal.
Copyright terms are indicated in the Republic of Lithuania Law on Copyright and Related Rights, Articles 4-37.