Design of 4.48–5.89 GHz LC-VCO in 65 nm RF CMOS Technology

Authors

  • V. Macaitis Vilnius Gediminas Technical University
  • V. Barzdenas Vilnius Gediminas Technical University
  • R. Navickas Vilnius Gediminas Technical University

DOI:

https://doi.org/10.5755/j01.eee.20.2.6383

Keywords:

CMOS integrated circuits, nanoelectronics, radio transceivers, radiofrequency integrated circuits

Abstract

This paper describes a 4.48 GHz–5.89 GHz LC voltage-controlled oscillator (LC-VCO) as a key component in RF transceivers. The circuit is fully designed in TSMC’s 65 nm radio-frequency complimentary metal-oxide-semiconductor technology process. The LC-VCO uses the structure of only one couple of NMOS differential negative resistances, tank circuit which consists of an optimal on-chip spiral inductor with switched capacitor and varactor arrays. The proposed design accomplishes wide tuning range frequency by using 6-bit switch capacitor array in addition to linearly varying MOS varactors. A switched current source block is used to improve the performance of the LC-VCO. The oscillator has a wide tuning range, between 4.48 GHz and 5.89 GHz. The LC-VCO dissipates 15.96 mW from a voltage supply of 1.8 V, whereas its phase noise is -124.1 dBc/Hz at 1 MHz offset of a at 5.89 GHz carrier.

DOI: http://dx.doi.org/10.5755/j01.eee.20.2.6383

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Published

2014-02-05

How to Cite

Macaitis, V., Barzdenas, V., & Navickas, R. (2014). Design of 4.48–5.89 GHz LC-VCO in 65 nm RF CMOS Technology. Elektronika Ir Elektrotechnika, 20(2), 44-47. https://doi.org/10.5755/j01.eee.20.2.6383

Issue

Vol. 20 No. 2 (2014)

Section

MICRO-, NANOELECTRONICS

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