Analysis of Deep Level Centers in GaAs pin-Diode Structures

Authors

  • O. Korolkov Tallinn University of Technology
  • J. Toompuu Tallinn University of Technology
  • T. Rang Tallinn University of Technology

DOI:

https://doi.org/10.5755/j01.eee.19.10.5903

Keywords:

Gallium Arsenide, pin-diodes, capacity relaxation method, deep levels

Abstract

This paper presents an analysis of the DLTS (Deep Level Transient Spectroscopy) spectra of GaAs p+-pin-n+ diodes. It is shown that the background spectrum of the deep levels is reproducible and depends on the liquid-phase epitaxy mode (LPE). The temperature dependence of the capacitance-voltage characteristics showed that the i layer is formed by compensation involving deep levels. The space charge covers the width of the i layer and spreads into the depletion p and n regions of the diode structures.

DOI: http://dx.doi.org/10.5755/j01.eee.19.10.5903

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Published

2013-12-10

How to Cite

Korolkov, O., Toompuu, J., & Rang, T. (2013). Analysis of Deep Level Centers in GaAs pin-Diode Structures. Elektronika Ir Elektrotechnika, 19(10), 95-98. https://doi.org/10.5755/j01.eee.19.10.5903

Issue

Vol. 19 No. 10 (2013)

Section

MICRO-, NANOELECTRONICS

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