Investigation of p-i-n GaAs Structures by DLTS Method
The main goal of the work is the interpretation of DLTS (Deep Level Transient Spectroscopy) spectra measurements on commercial GaAs p+-p-i-n-n+ structures to identify the deep level centers and their properties in p-i-n region. The experimental study operates the measurements of I-V and C-V relationships. The frequency and the temperature scan have been included. And finally, the capture cross section and depth profile measurements have been accomplished. For all the specimens the positions of the picks coincide from spectra to spectra and give the levels most close to A and B centers. During analytical review was determined the following dependences: barrier capacitance dependence on p-i-n width, the temperature dependence of emission rate, the temperature dependence of capture cross section. In the conclusion was made the suggestion that for more precise identification of defects in p-i-n diodes structural layers it is necessary to carry out separate analysis on more simple test structures. Ill. 8, bibl. 2, tabl. 1 (in English; abstracts in English, Russian and Lithuanian).
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