The New Equations of p-n Junction Carrier Injection Level

Authors

  • A. Baskys Vilnius Gediminas Technical University
  • M. Sapurov Center for Physical Sciences and Technology
  • R. Zubavicius Center for Physical Sciences and Technology

DOI:

https://doi.org/10.5755/j01.eee.19.2.3467

Keywords:

p-n junction, minority carriers, injection level, high-level injection, integrated circuit

Abstract

The new equations of minority carrier hole and electron injection levels kp and kn valid at high-level injection have been derived. They relate the kp and kn and the voltage drop across the p-n junction depletion region Ud. At low Ud, i.e. at low-level injection the obtained equations coincide with well known exponential equations of injection level. However, at high-level injection when Ud becomes high and is close to the potential barrier of junction, the derived equations give increased steepness of kp and kn dependence on Ud as compared with the exponential law. The dependences of kp and kn of concrete silicon p-n junctions with different impurity concentrations have been analyzed using derived equations of injection level.

DOI: http://dx.doi.org/10.5755/j01.eee.19.2.3467

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Published

2013-02-07

How to Cite

Baskys, A., Sapurov, M., & Zubavicius, R. (2013). The New Equations of p-n Junction Carrier Injection Level. Elektronika Ir Elektrotechnika, 19(2), 45-48. https://doi.org/10.5755/j01.eee.19.2.3467

Issue

Vol. 19 No. 2 (2013)

Section

MICRO-, NANOELECTRONICS

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