The New Equations of p-n Junction Carrier Injection Level

Abstract

The new equations of minority carrier hole and electron injection levels k_p and k_n valid at high-level injection have been derived. They relate the k_p and k_n and the voltage drop across the p-n junction depletion region U_d. At low U_d, i.e. at low-level injection the obtained equations coincide with well known exponential equations of injection level. However, at high-level injection when U_d becomes high and is close to the potential barrier of junction, the derived equations give increased steepness of k_p and k_n dependence on U_d as compared with the exponential law. The dependences of k_p and k_n of concrete silicon p-n junctions with different impurity concentrations have been analyzed using derived equations of injection level.

DOI: http://dx.doi.org/10.5755/j01.eee.19.2.3467