The Magneticreactive Effect in Transistors for Construction Transducers of Magnetic Field
AbstractIn the given article the method of build-up of radiomeasuring transducers of a magnetic field on a basis magneticreactive effect in bipolar and field-effect transistors is offered. It is shown, that change of a reactive component of a complete resistance from induction density on electrodes a source - drain of a field-effect transistor makes 0,6 Ohm/mT, and for the bipolar transistor on electrodes the emitter-collector - 12,5 Ohm/mT. Such changes of reactive components of a complete resistance are essential, that confirms an opportu-nity of practical application of these effects for making microelectronic radiomeasuring transducers. The circuit of the transducer of a magnetic field on field-effect transistors which sensitivity makes from 510 up to 3500 Hz/mT is offered. Ill. 3, bibl. 8 (in English; ab-stracts in English and Lithuanian).
How to Cite
The copyright for the paper in this journal is retained by the author(s) with the first publication right granted to the journal. The authors agree to the Creative Commons Attribution 4.0 (CC BY 4.0) agreement under which the paper in the Journal is licensed.
By virtue of their appearance in this open access journal, papers are free to use with proper attribution in educational and other non-commercial settings with an acknowledgement of the initial publication in the journal.