The Investigation of Gyroelectric n-InAs Phase Shifters Characteristics

Authors

  • V. Malisauskas Vilnius Gediminas Technical University
  • D. Plonis Vilnius Gediminas Technical University

DOI:

https://doi.org/10.5755/j01.eee.122.6.1836

Abstract

In this paper the open cylindrical gyroelectric phase shifters characteristics are investigated. The investigation is performed by changing their parameters: the magnetic flux density, the number of layers of dielectric, width and permittivities. The highest differential phase shift in n-InAs semiconductor and semiconductor-dielectric phase shifters can be obtained in range of magnetic flux density from 0 to 0.25 T. The minimum attenuation in phase shifters is obtained with one external dielectric layer. Ill. 8, bibl. 6 (in English; abstracts in English and Lithuanian).

DOI: http://dx.doi.org/10.5755/j01.eee.122.6.1836

Downloads

Published

2012-06-07

How to Cite

Malisauskas, V., & Plonis, D. (2012). The Investigation of Gyroelectric n-InAs Phase Shifters Characteristics. Elektronika Ir Elektrotechnika, 122(6), 121-124. https://doi.org/10.5755/j01.eee.122.6.1836

Issue

Vol. 122 No. 6 (2012)

Section

HIGH FREQUENCY TECHNOLOGY, MICROWAVES

License

The copyright for the paper in this journal is retained by the author(s) with the first publication right granted to the journal. The authors agree to the Creative Commons Attribution 4.0 (CC BY 4.0) agreement under which the paper in the Journal is licensed.

By virtue of their appearance in this open access journal, papers are free to use with proper attribution in educational and other non-commercial settings with an acknowledgement of the initial publication in the journal.