The Investigation of Gyroelectric n-InAs Phase Shifters Characteristics
AbstractIn this paper the open cylindrical gyroelectric phase shifters characteristics are investigated. The investigation is performed by changing their parameters: the magnetic flux density, the number of layers of dielectric, width and permittivities. The highest differential phase shift in n-InAs semiconductor and semiconductor-dielectric phase shifters can be obtained in range of magnetic flux density from 0 to 0.25 T. The minimum attenuation in phase shifters is obtained with one external dielectric layer. Ill. 8, bibl. 6 (in English; abstracts in English and Lithuanian).
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