Properties of the Retard System Models Based on the Complex Cross Section Multiconductor Lines

Abstract

We consider helical and meander retard systems based on the multiconductor lines with the complex cross-sections using multiconductor line method. We compare properties of the systems containing shielding elements between the helical or meander conductors and properties of the simple helical and meander systems. The gutter-type systems have advantages with respect to other systems. When helical or meander electrodes are made on the rigid dielectric layer, the upper-type gutter shield can be used. Then a small uncontrolled gap between the dielectric substrate and the shielding wall can appear. This gap has unwelcome influence on characteristics (retardation factor and characteristic impedance) of the retard systems. As dielectric permittivity of the substrate is higher, as greater influence of the small uncontrolled gap on the properties of the retard system exists. We propose to use a metal layer on the substrate below the shielding walls of the gutter-type shield. Ill. 10, tabl. 1, bibl. 17 (in English; summaries in English, Russian and Lithuanian).