Markovian Model of the Voltage Gating of Connexin-based Gap Junction Channels

Authors

  • A. Sakalauskaite Kaunas University of Technology
  • H. Pranevicius Kaunas University of Technology
  • M. Pranevicius Albert Einstein College of Medicine
  • F. Bukauskas Albert Einstein College of Medicine

DOI:

https://doi.org/10.5755/j01.eee.111.5.367

Keywords:

Kaunas University of Technology, Albert Einstein College of Medicine

Abstract

Gap junction (GJ) channels, which are formed of a connexin (Cx) protein provide pathways through which ions and small molecules are exchanged between adjacent cells. GJs co-ordinate the cellular activity in tissues by synchronizing their electrical activity and allowing a direct cell-to-cell chemical signaling. Electrically gap junctions present nonlinear conductance that depends on transjunctional voltage and can be modulated by chemical reagents and ions, such as pH, Ca2+, etc. Here, we describe the model of the voltage gating of gap junctions using Markovian formalism. The results obtained using a stationary Markov model are well comparable with those obtained using a stochastic/imitational model of voltage gating. Ill. 5, bibl. 5, tabl. 3 (in English; abstracts in English and Lithuanian).

http://dx.doi.org/10.5755/j01.eee.111.5.367

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Published

2011-06-08

How to Cite

Sakalauskaite, A., Pranevicius, H., Pranevicius, M., & Bukauskas, F. (2011). Markovian Model of the Voltage Gating of Connexin-based Gap Junction Channels. Elektronika Ir Elektrotechnika, 111(5), 103-106. https://doi.org/10.5755/j01.eee.111.5.367

Issue

Vol. 111 No. 5 (2011)

Section

SYSTEM ENGINEERING, COMPUTER TECHNOLOGY

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