Electro-Thermal Modelling and Experimental Verification of Power Semiconductor Diode
DOI:
https://doi.org/10.5755/j01.eie.26.2.25783Keywords:
Temperature, Modelling, Electro-thermal domain, Power diode, OptimizationAbstract
The aim of the proposed paper is discussing problematics related to the thermal modelling of power electronic components. More in detail, the electro-thermal relationship is investigated for the selected power diode, while analysis shall serve for system optimization considering thermal performance with the use of highly accurate 3D simulation model. The presented approach describes the procedure of the simulation model development, whereby the main part is discussing necessities relevant for material property identification through the indirect procedure, i.e, material properties are not known from the manufacturer. Electro-thermal dependencies are defined within the proposed model, while this model enables parametric changes of the geometrical properties of the device. Added value of this procedure is the possibility of its use in exact determination of the lifetime of a semiconductor component using mathematical models taking into account operational variables (current, voltage, temperature, etc.). The proposed model is verified and validated through thermovision experimental measurements within defined operational conditions.
Downloads
Published
How to Cite
Issue
Section
License
Authors retain copyright and grant the journal the right of the first publication with the paper simultaneously licensed under the Creative Commons Attribution 4.0 (CC BY 4.0) licence.
Authors are allowed to enter into separate, additional contractual arrangements for the non-exclusive distribution of the paper published in the journal with an acknowledgement of the initial publication in the journal.
Copyright terms are indicated in the Republic of Lithuania Law on Copyright and Related Rights, Articles 4-37.
Funding data
-
Agentúra na Podporu Výskumu a Vývoja
Grant numbers APVV-15/0396