Comparative Study of SiC Transistors for Active Current Limitation in S3R

Authors

  • David Marroqui
  • Jorge Borrell
  • Roberto Gutierrez
  • Jose Manuel Blanes
  • Ausias Garrigos
  • Enrique Maset

DOI:

https://doi.org/10.5755/j01.eie.23.5.19243

Keywords:

S3R, sequential switching shunt regulator, SiC, Cascode, current limiter, WBG

Abstract

In this paper a comparative analysis between different kinds of Silicon Carbide (SiC) transistors applied to the Sequential Switching Shunt Regulator (S3R) with active current limitation capability is presented. The S3R is a well-known Direct Energy Transfer photovoltaic power conditioner used in space vehicles.

The main novelty discussed in this paper is the use of SiC transistors, JFET cascodes and SiC MOSFETs, instead of Silicon MOSFETs. High-voltage, high-power and high-temperature characteristics of these devices make them ideal for this application.

DOI: http://dx.doi.org/10.5755/j01.eie.23.5.19243

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Published

2017-10-11

How to Cite

Marroqui, D., Borrell, J., Gutierrez, R., Blanes, J. M., Garrigos, A., & Maset, E. (2017). Comparative Study of SiC Transistors for Active Current Limitation in S3R. Elektronika Ir Elektrotechnika, 23(5), 54-60. https://doi.org/10.5755/j01.eie.23.5.19243

Issue

Vol. 23 No. 5 (2017)

Section

SIGNAL TECHNOLOGY

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