Simulation Analysis of Capacities Arsenide - Gallium of Field-Effect Transisors with a Gate the Schottky

Abstract

The questions of simulation analysis of capacities arsenide - gallium of field-effect transisors with a gate the Schottky are considered. The method of simulation analysis of capacities is offered which takes into account dependence of width depletion layer under a lock of the transistor as functions of voltages a gate - source and drain - source. The theoretical models are obtained as a result of determination of the law of variation of width depletion layer of a barrier the Schottky along the channel of the transistor, which is installed at usage of model " of two areas".