Application of Al Mask for SF6/N2 Reactive Ion Etching of Silicon
Abstract
We researched SF6/N2 reactive ion etching of silicon using Al mask. It was established, that Al mask prevent formation of polymeric layers and rate of etching is higher, than using photoresistive mask. Etching directionality amount to 20 units, selectivity - 400 units.Published
1999-03-07
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How to Cite
Application of Al Mask for SF6/N2 Reactive Ion Etching of Silicon. (1999). Elektronika Ir Elektrotechnika, 20(2). https://eejournal.ktu.lt/index.php/elt/article/view/16518
