Optimization of Optoelectronic Charge Converter's Parameters

Authors

  • A. Baluzis
  • S. Sakalauskas

Abstract

Theoretical simulation and experimental results of optical controlled Au-SiO2-Si(p)-SiO2-Au structure's capacitance are presented in the paper. We had obtained, it is possible to optimize the effective SiO2 layer's charge, the value of semiconductor doping, the value of photogeneration level, the length of optical signal wave and obtain maximum converter's transmission coefficient, if we choose the thickness of SiO2 layer which determines maximum value of registered signal.

Published

1999-01-14

How to Cite

Baluzis, A., & Sakalauskas, S. (1999). Optimization of Optoelectronic Charge Converter’s Parameters. Elektronika Ir Elektrotechnika, 19(1). Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/16473

Issue

Vol. 19 No. 1 (1999)

Section

Articles

License

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