Ion Beam Induced Solid-Phase Epitaxy of Crystalline Silicon during Simultaneous Silver Atoms Deposition on Amorphous Silicon

Abstract

The processes induced by ion beam in the bulk of amorphous silicon during simultaneous deposition of silver atoms on amorphous silicon target and ion irradiation ( Ar+, ion energy 75 keV, ion flux density - 6´1012 cm-2 s-1 ) are investigated. The low temperature solid-phase epitaxial growth of crystalline silicon during ion beam assisted deposition is assumed. The main processes determining the distribution profile of Ag atoms during ion beam-induced recrystallization are radiation enhanced diffusion and outdiffusion of silver atoms from the crystalline silicon.