Ion Beam Induced Solid-Phase Epitaxy of Crystalline Silicon during Simultaneous Silver Atoms Deposition on Amorphous Silicon

Authors

  • A. Mickus

Abstract

The processes induced by ion beam in the bulk of amorphous silicon during simultaneous deposition of silver atoms on amorphous silicon target and ion irradiation ( Ar+, ion energy 75 keV, ion flux density - 6´1012 cm-2 s-1 ) are investigated. The low temperature solid-phase epitaxial growth of crystalline silicon during ion beam assisted deposition is assumed. The main processes determining the distribution profile of Ag atoms during ion beam-induced recrystallization are radiation enhanced diffusion and outdiffusion of silver atoms from the crystalline silicon.

Published

1997-05-07

How to Cite

Mickus, A. (1997). Ion Beam Induced Solid-Phase Epitaxy of Crystalline Silicon during Simultaneous Silver Atoms Deposition on Amorphous Silicon. Elektronika Ir Elektrotechnika, 11(2). Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/15839

Issue

Section

Articles