80-dB Microwave Noise from an Avalanche Transistor Circuit
Extremely high ‘excess noise ratio’ of 80 dB is observed from an avalanche transistor circuit, operating in a random pulse mode. Broadband noise spectrum measured from 30 MHz to 1 GHz exhibits good flatness with the nonuniformity of only 1 dB. Experiments have been performed with the silicon bipolar junction microwave transistors. An analog circuit model is proposed and investigated.
How to Cite
The copyright for the paper in this journal is retained by the author(s) with the first publication right granted to the journal. The authors agree to the Creative Commons Attribution 4.0 (CC BY 4.0) agreement under which the paper in the Journal is licensed.
By virtue of their appearance in this open access journal, papers are free to use with proper attribution in educational and other non-commercial settings with an acknowledgement of the initial publication in the journal.