80-dB Microwave Noise from an Avalanche Transistor Circuit

Authors

  • Gytis Mykolaitis Vilnius Gediminas Technical University
  • Saulius Kersulis
  • Skaidra Bumeliene
  • Arunas Tamasevicius

DOI:

https://doi.org/10.5755/j01.eee.21.5.13324

Abstract

Extremely high ‘excess noise ratio’ of 80 dB is observed from an avalanche transistor circuit, operating in a random pulse mode. Broadband noise spectrum measured from 30 MHz to 1 GHz exhibits good flatness with the nonuniformity of only  1 dB. Experiments have been performed with the silicon bipolar junction microwave transistors. An analog circuit model is proposed and investigated.

DOI: http://dx.doi.org/10.5755/j01.eee.21.5.13324

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Published

2015-10-03

How to Cite

Mykolaitis, G., Kersulis, S., Bumeliene, S., & Tamasevicius, A. (2015). 80-dB Microwave Noise from an Avalanche Transistor Circuit. Elektronika Ir Elektrotechnika, 21(5), 40-43. https://doi.org/10.5755/j01.eee.21.5.13324

Issue

Vol. 21 No. 5 (2015)

Section

HIGH FREQUENCY TECHNOLOGY, MICROWAVES

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