Analysis of Nonlinearities in Phototransistors

Authors

  • J. Anilionienė Kaunas University of Technology

Abstract

A phototransistor model taking into account the main nonlinearities is introduced. For defining influence of nonlinearities on signal distortion, the method of Volterra – Wiener series has been offered. Simulation of phototransistor nonlinearities has been carried out considering nonlinearities of junction currents of an emitter and collector and their capacitances. Operational equation systems for an equivalent diagram of a phototransistor have been composed and analytic calculation expressions of functional series kernels have been obtained. Dependences of changes in constant components and in a first harmonic output current on input signal parameters have been presented. Il. 2, bibl. 4 (in English; summaries in English, Russian and Lithuanian).

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Published

2008-08-20

How to Cite

Anilionienė, J. (2008). Analysis of Nonlinearities in Phototransistors. Elektronika Ir Elektrotechnika, 87(7), 19-22. Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/11202

Issue

Vol. 87 No. 7 (2008)

Section

T 170 ELECTRONICS

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