Optimization of Memory Faults Coverage by Spares

Authors

  • V. Hahanov Kharkov National University of Radioelectronics
  • E. Litvinova Kharkov National University of Radioelectronics
  • K. Mostovaya Kharkov National University of Radioelectronics

Abstract

Memory repair method by means of spares that enables to cover faulty cells by minimal quantity of reserved components was represented. It enables to increase yield rate (by 5-10 %) by means of repair of faulty silicon crystals on the manufacturing stage, as well as to increase life cycle time of silicon crystals during operation phase. Ill. 12, bibl. 10 (in English; summaries in English, Russian and Lithuanian).

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Published

2008-02-01

How to Cite

Hahanov, V., Litvinova, E., & Mostovaya, K. (2008). Optimization of Memory Faults Coverage by Spares. Elektronika Ir Elektrotechnika, 82(2), 17-22. Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/11048

Issue

Vol. 82 No. 2 (2008)

Section

T 125 AUTOMATION, ROBOTICS

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