Analysis of Deep Level Centers in GaAs pin-Diode Structures

O. Korolkov, J. Toompuu, T. Rang

Abstract


This paper presents an analysis of the DLTS (Deep Level Transient Spectroscopy) spectra of GaAs p+-pin-n+ diodes. It is shown that the background spectrum of the deep levels is reproducible and depends on the liquid-phase epitaxy mode (LPE). The temperature dependence of the capacitance-voltage characteristics showed that the i layer is formed by compensation involving deep levels. The space charge covers the width of the i layer and spreads into the depletion p and n regions of the diode structures.

DOI: http://dx.doi.org/10.5755/j01.eee.19.10.5903


Keywords


Gallium Arsenide; pin-diodes; capacity relaxation method; deep levels

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Print ISSN: 1392-1215
Online ISSN: 2029-5731