Class-E Power Amplifier with Novel Pre-Distortion Linearization Technique for 4G Mobile Wireless Communications

Authors

  • U. Eswaran University of Malaya
  • H. Ramiah University of Malaya
  • J. Kanesan University of Malaya

DOI:

https://doi.org/10.5755/j01.eee.20.4.3185

Keywords:

Linearization, LTE, PAE, power amplifier

Abstract

A new method to improve the battery life span of a 4G handset power amplifier (PA) is proposed. This technique is realized by employing a novel passive linearization topology on a class-E PA. Implemented in a 2 µm InGaP/GaAs Hetero-Junction Bipolar Transistor (HBT) technology, the PA delivers 49 % of power added efficiency (PAE) at output power of 28 dBm while complying with the Long Term Evolution (LTE) regulation at Band 1(1920 MHz–1980 MHz) with corresponding supply voltage headroom of 4 V. The performance enhancement is achieved at LTE channel bandwidth of 20 MHz. To the best of the author’s knowledge, this is the first class-E PA which meets adjacent channel leakage ratio (ACLR) specifications at 20 MHz LTE bandwidth.

DOI: http://dx.doi.org/10.5755/j01.eee.20.4.3185

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Published

2014-03-26

How to Cite

Eswaran, U., Ramiah, H., & Kanesan, J. (2014). Class-E Power Amplifier with Novel Pre-Distortion Linearization Technique for 4G Mobile Wireless Communications. Elektronika Ir Elektrotechnika, 20(4), 53-56. https://doi.org/10.5755/j01.eee.20.4.3185

Issue

Vol. 20 No. 4 (2014)

Section

HIGH FREQUENCY TECHNOLOGY, MICROWAVES

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