AlGaInAs/InP Based Five & Three Quantum Wells Mode Locked Laser Diodes: A Comparative Study

Authors

  • Jehan Akbar Department of Physics, Hazara University Mansehra, Pakistan; Abdus Salam International Centre for Theoretical Physics, Italy
  • Muhammad Hanif Department of Physics, Hazara University Mansehra, Pakistan
  • Muhammad Azhar Naeem Department of Electrical Engineering, University of the Punjab, Pakistan https://orcid.org/0000-0003-4759-4590
  • Kamran Abid Department of Electrical Engineering, University of the Punjab, Pakistan

DOI:

https://doi.org/10.5755/j01.eie.26.5.26002

Keywords:

Quantum well lasers, Laser mode locking, Optical pulses, Optical device fabrication

Abstract

Comparison of performance of semiconductor mode-locked laser diodes fabricated using AlGaInAs/InP material containing 5 and 3 quantum wells (QWs) inside the active region is reported. The simulations and experimental results show that lasers containing five QWs materials produce larger beam divergence and temporally broader optical pulses. For improvement in the mode-locking of lasers and reducing the far-field pattern, the number of QWs inside the active region was decreased from five to three and a far-field decreasing layer along with a thick spacer layer were introduced in the n-cladding region of epitaxial material. Before growing the material, simulations were carried out to optimise the design. The lower optical confinement factor and higher gain saturation energy of three QWs based mode-locked lasers provide higher average and peak output power, reduced and symmetric far-field pattern, better radio frequency (RF) spectra, shorter optical pulses, and stable optimal mode-locking for a wide range of gain current and saturable absorber reverse voltage.

Author Biographies

Jehan Akbar, Department of Physics, Hazara University Mansehra, Pakistan; Abdus Salam International Centre for Theoretical Physics, Italy

Department of Physics, Assistant Professor

Research Associate, ICTP Italy

Muhammad Hanif, Department of Physics, Hazara University Mansehra, Pakistan

Department of Physics

Assistant professor

Muhammad Azhar Naeem, Department of Electrical Engineering, University of the Punjab, Pakistan

Professor, Department of Electrical Engineering, College of Engineering and Emerging Technologies

Kamran Abid, Department of Electrical Engineering, University of the Punjab, Pakistan

Department of Electrical Engineering

Professor

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Published

2020-10-27

How to Cite

Akbar, J., Hanif, M. ., Naeem, M. A., & Abid, K. (2020). AlGaInAs/InP Based Five & Three Quantum Wells Mode Locked Laser Diodes: A Comparative Study. Elektronika Ir Elektrotechnika, 26(5), 22-27. https://doi.org/10.5755/j01.eie.26.5.26002

Issue

Section

MICRO-, NANOELECTRONICS