Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN

Authors

  • Marek Suproniuk
  • Karol Piwowarski
  • Bogdan Perka
  • Pawel Kaminski
  • Roman Kozlowski
  • Marian Teodorczyk

DOI:

https://doi.org/10.5755/j01.eie.25.4.23968

Keywords:

Photoconductive semiconductor switches, Pulse generators, Semi-insulating GaN, Semi-insulating GaP

Abstract

This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN). Currently, the work is in progress to determine the optimal values of PCSS parameters. In this article, the parameters of the selected semiconductor materials used for making PCSSs, the device operation principle, and possible areas of use are presented. The paper demonstrates the construction of test PCSSs based on SI GaP and SI GaN and results of blocking characteristics measurements without the illumination, as well as with illumination with a small photon flux. Further research directions are presented also.

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Published

2019-08-07

How to Cite

Suproniuk, M. ., Piwowarski, K. ., Perka, B. ., Kaminski, P. ., Kozlowski, R. ., & Teodorczyk, M. . (2019). Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN. Elektronika Ir Elektrotechnika, 25(4), 36-39. https://doi.org/10.5755/j01.eie.25.4.23968

Issue

Vol. 25 No. 4 (2019)

Section

ELECTRONICS

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