Effective Estimation Method of Basic Parameters of MOS Structures

Abstract

A new operative and simple estimation method of parameters of MOS structures is proposed. This method may be succesfully applied in industry as well as for scientific research purposes. For this is enough, by using linearly increasing voltage, to measure C-V and charge current density dependences of MOS sructure, and, after not complicated mathematical treatment of results, to obtain main parameters: voltage of flat bands, equivalent charge in dielectric layer, density of dopants, thickness of depletion region, permittivities of semiconductor and dielectric layer. Parameters of the investigated MOS (KDB-10) structures determined using the above-mentioned method are the following: flat-band voltage U_fb = (6,9± 0,1) V, equivalent charge of the SiO₂ layer Q_SiO2 =   (7,45± 0,15)× 10^-8 C/cm², density of impurities introduced into the semiconductor N_a = (1,33± 0,10)× 10¹⁵ cm^-3, maximum thickness of the depletion layer w(t) = (0,9± 0,1) m m, dielectric constant of the SiO₂ layer e ₁ = 4,1± 0,15. These values are in accord with corresponding values obtained using other methods of measurement.