Influence of Matrix Type on Negative Capacitance Effect in Nanogranular Composite Films FeCoZr-Insulator

Authors

  • T. N. Koltunowicz Lublin University of Technology
  • P. Zhukowski Lublin University of Technology
  • A. K. Fedotov Belarusian State University
  • A. V. Larkin Belarusian State University
  • A. Patryn Koszalin University of Technology
  • B. Andryevskyy Koszalin University of Technology
  • A. Saad Al-Balqa Applied University
  • J. A. Fedotova National Center for Particles and High Energy Physics
  • V. V. Fedotova Scientific-Practical Materials Research Center of NAS of Belarus

DOI:

https://doi.org/10.5755/j01.eee.19.4.1693

Keywords:

Metal-insulator composite, nanocomposites, negative capacitance effect, equivalent circuits

Abstract

We observed an inductive contribution to impedance in granular (Fe0.45Co0.45Zr0.10)x(Al2O3)(1-x) and (Fe0.45Co0.45Zr0.10)x(PZT)(1-x) nanocomposite films deposited in Ar + O2 atmosphere. The films with x » 0.30 (in dielectric regime) demonstrated negative capacitance effect which were explained by hopping conductance of electrons over FeCoZr nanoparticles covered with complicated CoFe-oxides and embedded into dielectric matrix. In particular, at the determined conditions such a structure of nanocomposite resulted in the increase of hopping electron mean life time on nanoparticles and delay its returning jump under subjection of alternating electric field that created the possibility for positive angles of the phase shifts q and properlynegative capacitance (inductive-like contribution) effect.

DOI: http://dx.doi.org/10.5755/j01.eee.19.4.1693

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Published

2013-03-28

How to Cite

Koltunowicz, T. N., Zhukowski, P., Fedotov, A. K., Larkin, A. V., Patryn, A., Andryevskyy, B., Saad, A., Fedotova, J. A., & Fedotova, V. V. (2013). Influence of Matrix Type on Negative Capacitance Effect in Nanogranular Composite Films FeCoZr-Insulator. Elektronika Ir Elektrotechnika, 19(4), 37-40. https://doi.org/10.5755/j01.eee.19.4.1693

Issue

Vol. 19 No. 4 (2013)

Section

MICRO-, NANOELECTRONICS

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