Application of High Intensity Radiation for Control of Parameters of Power Semiconductor Devices

Authors

  • L.P. Anufriev
  • A.F. Kerencev
  • V.L. Lanin

Abstract

The processes of mounting of power high-voltage transistors by the vibration soldering and soldering in the furnace are investigated. The statistical regulation of processes has supplied a high controllability and specific output of fit devices.

Published

2000-04-18

Issue

Vol. 26 No. 3 (2000)

Section

Articles

License

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How to Cite

Application of High Intensity Radiation for Control of Parameters of Power Semiconductor Devices. (2000). Elektronika Ir Elektrotechnika, 26(3). https://eejournal.ktu.lt/index.php/elt/article/view/16842