The Modeling of the Current of the Canal of the Gaas Barrier-Gate Fet

Authors

  • N.G. Tarnovsky
  • V.S. Osadchuk
  • A.V. Osadchuk

Abstract

The modeling of the output current-voltage characteristics is considered. The mathematical model is built on the base of the binominal of the bit-linear approximation of the dependence of the drift rate in GaAs from tension of the electrical field. The new method of the using approximation which describes static characteristics barrier-gate FET is suggested.

Published

1998-08-29

How to Cite

Tarnovsky, N., Osadchuk, V., & Osadchuk, A. (1998). The Modeling of the Current of the Canal of the Gaas Barrier-Gate Fet. Elektronika Ir Elektrotechnika, 17(4). Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/16025

Issue

Vol. 17 No. 4 (1998)

Section

Articles

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