UHF Multiplexor on n-GaAs

Authors

  • J. Parseliunas
  • R. Miskinis
  • P. Rutkowski
  • E. Urba
  • G. Mazylis

Abstract

A frequency multiplexor for high power microwave radiation made of an epitaxial structure of n-GaAs grown on a semiinsulating substrate is investigated experimentally. Also a simplified theoretical model of the harmonic generation in semiconductors is considered. The operation of the multiplexor is based on peculiarities of the volt-amperic characteristic of n-GaAs which are due to formation of strong electric field domains in relatively strongly doped semiconductors. Those peculiarities make possible the generation of even harmonics of microwave field without intentionally created constant voltage bias, as it appears automatically. Therefore, neither source of voltage nor ohmic contacts on a sample are needed.

Published

1997-11-28

How to Cite

Parseliunas, J., Miskinis, R., Rutkowski, P., Urba, E., & Mazylis, G. (1997). UHF Multiplexor on n-GaAs. Elektronika Ir Elektrotechnika, 13(4). Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/15901

Issue

Vol. 13 No. 4 (1997)

Section

Articles

License

The copyright for the paper in this journal is retained by the author(s) with the first publication right granted to the journal. The authors agree to the Creative Commons Attribution 4.0 (CC BY 4.0) agreement under which the paper in the Journal is licensed.

By virtue of their appearance in this open access journal, papers are free to use with proper attribution in educational and other non-commercial settings with an acknowledgement of the initial publication in the journal.