UHF Multiplexor on n-GaAs
AbstractA frequency multiplexor for high power microwave radiation made of an epitaxial structure of n-GaAs grown on a semiinsulating substrate is investigated experimentally. Also a simplified theoretical model of the harmonic generation in semiconductors is considered. The operation of the multiplexor is based on peculiarities of the volt-amperic characteristic of n-GaAs which are due to formation of strong electric field domains in relatively strongly doped semiconductors. Those peculiarities make possible the generation of even harmonics of microwave field without intentionally created constant voltage bias, as it appears automatically. Therefore, neither source of voltage nor ohmic contacts on a sample are needed.
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