Measurement of swtitching losses in power transistor structure

Authors

  • P. Špánik University of Žilina
  • B. Dobrucký University of Žilina
  • M. Frívaldský University of Žilina
  • P. Drgoňa University of Žilina
  • I. Kurytnik University of Bielsko-Biała

Abstract

Testing device designed for experimental examination of processes in power electronics devices during various switching modes is described. Through the use of auxiliary circuits additional switching modes (ZVS, ZCS) are realized except hard switching, and turning-off with reduced current respectively. The device’s advantage is possibility of fine dead time setting, allowing us analyzing effects of this phenomenon on measurements of commutation losses. Ill. 12, bibl. 10 (in English; summaries in English, Russian and Lithuanian).

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Published

2008-02-01

How to Cite

Špánik, P., Dobrucký, B., Frívaldský, M., Drgoňa, P., & Kurytnik, I. (2008). Measurement of swtitching losses in power transistor structure. Elektronika Ir Elektrotechnika, 82(2), 75-78. Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/11059

Issue

Vol. 82 No. 2 (2008)

Section

T 170 ELECTRONICS

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