Non-stationary Drift of Electrons in Submicron High Electron Mobility Transistor with two Heterojunctions

Authors

  • V. I. Timofeyev National Technical University of Ukraine
  • M. Amini National Technical University of Ukraine
  • E. M. Faleeva National Technical University of Ukraine

Abstract

Algorithms and numerical procedures for analysis of physical characterizations distributing in a submicron high electron mobility transistor (HEMT) are developed. Based on a two-dimensional physical-topological model processes of non-stationary carriers’ drift in a transistor with two potential wells are considered. It is shown that the average electron gas temperature lower and electron drift velocity is higher in transistors with two potential wells with the submicron gate size (0.2μm), than in traditional transistor structures. Ill. 4, bibl. 9 (in English; summaries in English, Russian and Lithuanian).

Downloads

Published

2007-04-19

How to Cite

Timofeyev, V. I., Amini, M., & Faleeva, E. M. (2007). Non-stationary Drift of Electrons in Submicron High Electron Mobility Transistor with two Heterojunctions. Elektronika Ir Elektrotechnika, 76(4), 33-36. Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/10713

Issue

Vol. 76 No. 4 (2007)

Section

T 170 ELECTRONICS

License

The copyright for the paper in this journal is retained by the author(s) with the first publication right granted to the journal. The authors agree to the Creative Commons Attribution 4.0 (CC BY 4.0) agreement under which the paper in the Journal is licensed.

By virtue of their appearance in this open access journal, papers are free to use with proper attribution in educational and other non-commercial settings with an acknowledgement of the initial publication in the journal.