The 1/f Noise in a Two-Dimensional Electron Gas: Temperature and Electric Field Considerations

Authors

  • S. Mouetsi Université de Reims
  • A. El Hdiy Université de Reims
  • M. Bouchemat Université Mentouri

Abstract

A two-dimensional electron gas in an AlGaAs/GaAs heterostructure has been characterized by the low frequency noise method for various temperatures. Different contributions (thermal noise, generation – recombination noise and 1/f noise) have been identified. The 1/f noise has been extracted from the total noise and Hooge’s parameters have been determined and analyzed on a function of temperature. The parameters showed a decrease with the temperature. Measurements of the thermal noise versus device length of the sample permitted us to estimate the contribution of the contact noise and the results showed the good quality of contacts. Ill. 5, bibl. 13 (in English; summaries in English, Russian and Lithuanian).

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Published

2009-04-19

How to Cite

Mouetsi, S., Hdiy, A. E., & Bouchemat, M. (2009). The 1/f Noise in a Two-Dimensional Electron Gas: Temperature and Electric Field Considerations. Elektronika Ir Elektrotechnika, 92(4), 3-6. Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/10213

Issue

Vol. 92 No. 4 (2009)

Section

T 170 ELECTRONICS

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