Optimum Electromagnetic Modelling of RF MEMS Switches
Radio frequency microelectromechanical systems (RF MEMS) switch technology may have the potential to replace semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. RF MEMS switches are being developed for low insertion loss, high isolation loss and high linearity that are required over a broad frequency band application. In wireless mobile communication systems, microstrip transmission lines (t-line) have received attention for their attractive benefits such as low profile, light weight, and easy fabrication. The present work has thus been to explore the design and modelling of low loss RF MEMS switches implemented in a microstrip discontinuity t-line configuration. The electromagnetic modelling of an RF MEMS switch with a microstrip line is presented with a simple analytical model to determine the scattering parameters. This study shows that an RF MEMS switch with a microstrip t-line provided less than 0.01 dB–0.05 dB insertion loss for 50 GHz frequency. Moreover, there is an isolation loss of 50 dB over frequencies up to 50 GHz frequency. This low insertion and high isolation loss in the single beam RF MEMS switch with a microstrip discontinuity t-line contributes to configuring a low loss transmission line for RF communication.