Plasma–Assisted Materials Processing for Manufacturing of the VLSI Circuits

  • A. Grigonis Kauno technologijos universitetas


The reactive ion etching of silicon and GaAs in ionized gas of CF4-xClx, O2, SF6, and their mixtures with oxygen and hydrogen have been studies. The ion of low energy enhance the rate of heterogeneous reactions and the desorption of volatile compounds. Oxide and fluoride layer on the surface increases with the increase of bombarding ion energy. The formed surface layer at these conditions reduces the process of etching of GaAs. Etching in CF2Cl2 plasma is the most anisotropic, because the low amount of fluorine results the increase of concentration of CFx radicals. The formation of the altered layer and anizotropical etching through a mask may be described qualitatively by the phenomenological model.