The Influence of Annealing on Electrical Characteristics of Au(Se)-nGaAs Schottky Contact
AbstractThe annealing effects on current-voltage characteristics of H2SeO3 treated Au-nGaAs Schottky contact were investigated. Research on the influence of selenious acid solution concentration was performed. There were revealed, that the effects of H2SeO3:H2O solution treatment on the I-V characteristics of Au(Se)-nGaAs Schottky contact depends upon the concentration of solution. It can be explained by dependence of the selenides layer formation rate upon the concentration of the H2SeO3:H2O solution. The highest effective barrier height and the lowest ideality factor (respectively 0,96 eV and 1,03) were observed in the case of the 5 s treated by 0.1% concentration H2SeO3:H2O solution Au-nGaAs Schottky contacts. It can be explained by formation of the continuous selenides layer without the “islands” of the excess selenium on it.
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