The Influence of Annealing on Electrical Characteristics of Au(Se)-nGaAs Schottky Contact

  • K. Slapikas
  • S. Meskinis
  • J. Margelevicius
  • R. Gudaitis

Abstract

The annealing effects on current-voltage characteristics of H2SeO3 treated Au-nGaAs Schottky contact were investigated. Research on the influence of selenious acid solution concentration was performed. There were revealed, that the effects of H2SeO3:H2O solution treatment on the I-V characteristics of Au(Se)-nGaAs Schottky contact depends upon the concentration of solution. It can be explained by dependence of the selenides layer formation rate upon the concentration of the H2SeO3:H2O solution. The highest effective barrier height and the lowest ideality factor (respectively 0,96 eV and 1,03) were observed in the case of the 5 s treated by 0.1% concentration H2SeO3:H2O solution Au-nGaAs Schottky contacts. It can be explained by formation of the continuous selenides layer without the “islands” of the excess selenium on it.
Published
2000-04-18
How to Cite
Slapikas, K., Meskinis, S., Margelevicius, J., & Gudaitis, R. (2000). The Influence of Annealing on Electrical Characteristics of Au(Se)-nGaAs Schottky Contact. Elektronika Ir Elektrotechnika, 26(3). Retrieved from http://eejournal.ktu.lt/index.php/elt/article/view/16855
Section
Articles