The Influence of Annealing on Electrical Characteristics of Au(Se)-nGaAs Schottky Contact

Authors

  • K. Slapikas
  • S. Meskinis
  • J. Margelevicius
  • R. Gudaitis

Abstract

The annealing effects on current-voltage characteristics of H2SeO3 treated Au-nGaAs Schottky contact were investigated. Research on the influence of selenious acid solution concentration was performed. There were revealed, that the effects of H2SeO3:H2O solution treatment on the I-V characteristics of Au(Se)-nGaAs Schottky contact depends upon the concentration of solution. It can be explained by dependence of the selenides layer formation rate upon the concentration of the H2SeO3:H2O solution. The highest effective barrier height and the lowest ideality factor (respectively 0,96 eV and 1,03) were observed in the case of the 5 s treated by 0.1% concentration H2SeO3:H2O solution Au-nGaAs Schottky contacts. It can be explained by formation of the continuous selenides layer without the “islands” of the excess selenium on it.

Published

2000-04-18

How to Cite

Slapikas, K., Meskinis, S., Margelevicius, J., & Gudaitis, R. (2000). The Influence of Annealing on Electrical Characteristics of Au(Se)-nGaAs Schottky Contact. Elektronika Ir Elektrotechnika, 26(3). Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/16855

Issue

Vol. 26 No. 3 (2000)

Section

Articles

License

The copyright for the paper in this journal is retained by the author(s) with the first publication right granted to the journal. The authors agree to the Creative Commons Attribution 4.0 (CC BY 4.0) agreement under which the paper in the Journal is licensed.

By virtue of their appearance in this open access journal, papers are free to use with proper attribution in educational and other non-commercial settings with an acknowledgement of the initial publication in the journal.