Research of Puncture of Thin Dielectric Layers and Metal Layers Defects
AbstractThe possibility of formation stuck-at and bridging faults of CMOS integrated circuits into many-layer metal and dielectric structures are examined. Two structure: the metal-oxide-semiconductor (MOS) and the metal-oxide-metal are analyzed. Physical cause of formation defects into thin metal and dielectric layer are analyzed. Phenomenon of electrical puncture is discussed. Recommendations of subsequent research of layer defects are presented.
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