Application of Al Mask for SF6/N2 Reactive Ion Etching of Silicon

V. Grigaliunas, V. Kopustinskas, J. Margelevicius, D. Eidukas

Abstract


We researched SF6/N2 reactive ion etching of silicon using Al mask. It was established, that Al mask prevent formation of polymeric layers and rate of etching is higher, than using photoresistive mask. Etching directionality amount to 20 units, selectivity - 400 units.

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Print ISSN: 1392-1215
Online ISSN: 2029-5731