Application of Al Mask for SF6/N2 Reactive Ion Etching of Silicon

Authors

  • V. Grigaliunas
  • V. Kopustinskas
  • J. Margelevicius
  • D. Eidukas

Abstract

We researched SF6/N2 reactive ion etching of silicon using Al mask. It was established, that Al mask prevent formation of polymeric layers and rate of etching is higher, than using photoresistive mask. Etching directionality amount to 20 units, selectivity - 400 units.

Published

1999-03-07

How to Cite

Grigaliunas, V., Kopustinskas, V., Margelevicius, J., & Eidukas, D. (1999). Application of Al Mask for SF6/N2 Reactive Ion Etching of Silicon. Elektronika Ir Elektrotechnika, 20(2). Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/16518

Issue

Vol. 20 No. 2 (1999)

Section

Articles

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