Non-stationary Drift of Electrons in Submicron High Electron Mobility Transistor with two Heterojunctions
Algorithms and numerical procedures for analysis of physical characterizations distributing in a submicron high electron mobility transistor (HEMT) are developed. Based on a two-dimensional physical-topological model processes of non-stationary carriers’ drift in a transistor with two potential wells are considered. It is shown that the average electron gas temperature lower and electron drift velocity is higher in transistors with two potential wells with the submicron gate size (0.2μm), than in traditional transistor structures. Ill. 4, bibl. 9 (in English; summaries in English, Russian and Lithuanian).
Authors retain copyright and grant the journal the right of the first publication with the paper simultaneously licensed under the Creative Commons Attribution 4.0 (CC BY 4.0) licence.
Authors are allowed to enter into separate, additional contractual arrangements for the non-exclusive distribution of the paper published in the journal with an acknowledgement of the initial publication in the journal.
Copyright terms are indicated in the Republic of Lithuania Law on Copyright and Related Rights, Articles 4-37.