Non-stationary Drift of Electrons in Submicron High Electron Mobility Transistor with two Heterojunctions
Algorithms and numerical procedures for analysis of physical characterizations distributing in a submicron high electron mobility transistor (HEMT) are developed. Based on a two-dimensional physical-topological model processes of non-stationary carriers’ drift in a transistor with two potential wells are considered. It is shown that the average electron gas temperature lower and electron drift velocity is higher in transistors with two potential wells with the submicron gate size (0.2μm), than in traditional transistor structures. Ill. 4, bibl. 9 (in English; summaries in English, Russian and Lithuanian).
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