G. N. Tarnovskiy and V. A. Osadchuk, “Simulation Analysis of Capacities Arsenide - Gallium of Field-Effect Transisors with a Gate the Schottky”, ELEKTRON ELEKTROTECH, vol. 22, no. 4, Aug. 1999, Accessed: Jan. 22, 2026. [Online]. Available: https://eejournal.ktu.lt/index.php/elt/article/view/16560