Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN. Elektronika ir Elektrotechnika, [S. l.], v. 25, n. 4, p. 36–39, 2019. DOI: 10.5755/j01.eie.25.4.23968. Disponível em: https://eejournal.ktu.lt/index.php/elt/article/view/23968.. Acesso em: 5 dec. 2025.