TIMOFEYEV, V. I.; AMINI, M.; FALEEVA, E. M. Non-stationary Drift of Electrons in Submicron High Electron Mobility Transistor with two Heterojunctions. Elektronika ir Elektrotechnika, [S. l.], v. 76, n. 4, p. 33–36, 2007. DOI: 10.5755/j02.eie.10713. Disponível em: https://eejournal.ktu.lt/index.php/elt/article/view/10713.. Acesso em: 10 may. 2026.