Optimisation and Problems of the Channel Area Formed by Two Ion Implantations in NMOS Structures. Elektronika ir Elektrotechnika, [S. l.], v. 104, n. 8, p. 35–38, 2010. Disponível em: https://eejournal.ktu.lt/index.php/elt/article/view/9205.. Acesso em: 5 dec. 2025.