Tarnovskiy GN, Osadchuk VA. Simulation Analysis of Capacities Arsenide - Gallium of Field-Effect Transisors with a Gate the Schottky. ELEKTRON ELEKTROTECH [Internet]. 1999Aug.29 [cited 2024Nov.21];22(4). Available from: https://eejournal.ktu.lt/index.php/elt/article/view/16560