Fan, Lin, Arnold Knott, and Ivan Harald Holger Jorgensen. “Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process”. Elektronika ir Elektrotechnika 22, no. 3 (June 17, 2016): 37 - 43. Accessed April 27, 2024. https://eejournal.ktu.lt/index.php/elt/article/view/15312.