“Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process”. Elektronika ir Elektrotechnika 22, no. 3 (June 17, 2016): 37–43. Accessed December 5, 2025. https://eejournal.ktu.lt/index.php/elt/article/view/15312.